Type Designator: STP8NA50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel

Absolute Maximum Ratings

Pd ⓘ – Maximum Power Dissipation: 125 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 30 V
|Id| ⓘ – Maximum Drain Current: 8 A
Tj ⓘ – Maximum Junction Temperature: 150 °C

Electrical Characteristics

|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 3.75 V
Qg ⓘ – Total Gate Charge: 55 nC
tr ⓘ – Rise Time: 25 nS
Cossⓘ – Output Capacitance: 190 pF
Rds ⓘ – Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO220

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